Abstract:
A cost effective p-type Copper zinc tin selenide Cu2ZnSnSe4 (CZTSe) thin film was
fabricated on molybdenum (Mo) coated soda lime glass substrate by sputtering method
followed by rapid thermal processed (RTP) selenization. The n-type CdS layer with 50 nm
were fabricated by chemical bath deposition, a resistive zinc oxide (i-ZnO) and a
conducting transparent Al doped ZnO (Al:ZnO) were fabricated by sputtering
consecutively. The structural, surface morphology and optical properties were investigated
by X-ray diffraction, scanning electron microscopy (SEM),and Raman spectroscopy. The
preliminary solar cell device of SLG/Mo/CZTS/CdS/i-ZnO/Al:ZnO/Al structure were
precisely fabricated and the obtained results were presented.
