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Fabrication and characterization of SLG/Mo/CZTS/CdS/i-ZnO/Al:ZnO/Al thin film solar cell device

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dc.contributor.author Suman, R
dc.contributor.author Revathy, M. S
dc.contributor.author Priyal, M
dc.contributor.author Chitravel, T
dc.contributor.author Kumar, T. P
dc.date.accessioned 2020-11-10T02:33:08Z
dc.date.available 2020-11-10T02:33:08Z
dc.date.issued 1905-07
dc.identifier.citation Journal of Ovonic Research, Vol. 11, No. 5, pp. 243- 248 en_US
dc.identifier.issn 1584-9953
dc.identifier.uri http://prints.iiap.res.in/handle/2248/6737
dc.description Restricted Access © National Institute of Research and Development for Optoelectronics en_US
dc.description.abstract A cost effective p-type Copper zinc tin selenide Cu2ZnSnSe4 (CZTSe) thin film was fabricated on molybdenum (Mo) coated soda lime glass substrate by sputtering method followed by rapid thermal processed (RTP) selenization. The n-type CdS layer with 50 nm were fabricated by chemical bath deposition, a resistive zinc oxide (i-ZnO) and a conducting transparent Al doped ZnO (Al:ZnO) were fabricated by sputtering consecutively. The structural, surface morphology and optical properties were investigated by X-ray diffraction, scanning electron microscopy (SEM),and Raman spectroscopy. The preliminary solar cell device of SLG/Mo/CZTS/CdS/i-ZnO/Al:ZnO/Al structure were precisely fabricated and the obtained results were presented. en_US
dc.language.iso en en_US
dc.publisher National Institute of Research and Development for Optoelectronics en_US
dc.subject CZTS en_US
dc.subject Thin film en_US
dc.subject p-type Absorber layer en_US
dc.subject Solar cells en_US
dc.subject Cost effective en_US
dc.title Fabrication and characterization of SLG/Mo/CZTS/CdS/i-ZnO/Al:ZnO/Al thin film solar cell device en_US
dc.type Article en_US


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