dc.contributor.author |
Suman, R |
|
dc.contributor.author |
Revathy, M. S |
|
dc.contributor.author |
Priyal, M |
|
dc.contributor.author |
Chitravel, T |
|
dc.contributor.author |
Kumar, T. P |
|
dc.date.accessioned |
2020-11-10T02:33:08Z |
|
dc.date.available |
2020-11-10T02:33:08Z |
|
dc.date.issued |
1905-07 |
|
dc.identifier.citation |
Journal of Ovonic Research, Vol. 11, No. 5, pp. 243- 248 |
en_US |
dc.identifier.issn |
1584-9953 |
|
dc.identifier.uri |
http://prints.iiap.res.in/handle/2248/6737 |
|
dc.description |
Restricted Access © National Institute of Research and Development for Optoelectronics |
en_US |
dc.description.abstract |
A cost effective p-type Copper zinc tin selenide Cu2ZnSnSe4 (CZTSe) thin film was
fabricated on molybdenum (Mo) coated soda lime glass substrate by sputtering method
followed by rapid thermal processed (RTP) selenization. The n-type CdS layer with 50 nm
were fabricated by chemical bath deposition, a resistive zinc oxide (i-ZnO) and a
conducting transparent Al doped ZnO (Al:ZnO) were fabricated by sputtering
consecutively. The structural, surface morphology and optical properties were investigated
by X-ray diffraction, scanning electron microscopy (SEM),and Raman spectroscopy. The
preliminary solar cell device of SLG/Mo/CZTS/CdS/i-ZnO/Al:ZnO/Al structure were
precisely fabricated and the obtained results were presented. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
National Institute of Research and Development for Optoelectronics |
en_US |
dc.subject |
CZTS |
en_US |
dc.subject |
Thin film |
en_US |
dc.subject |
p-type Absorber layer |
en_US |
dc.subject |
Solar cells |
en_US |
dc.subject |
Cost effective |
en_US |
dc.title |
Fabrication and characterization of SLG/Mo/CZTS/CdS/i-ZnO/Al:ZnO/Al thin film solar cell device |
en_US |
dc.type |
Article |
en_US |