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Enhanced spectral absorption in a-silicon photovoltaic cell by inserting c-silicon quantum wells

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dc.contributor.author Sircar, R
dc.contributor.author Tripathi, B
dc.contributor.author Saxena, A. K
dc.contributor.author Dibya, P
dc.contributor.author Srivastava, J. T
dc.contributor.author Gupta, S
dc.date.accessioned 2009-08-31T10:25:27Z
dc.date.available 2009-08-31T10:25:27Z
dc.date.issued 2009
dc.identifier.citation Ghosh, Ajay and Choudhury, Debesh eds., Proceedings of International Conference on trends in optics and photonics., March 1 – 4, 2009, Kolkata, India., pp. 17 - 21 en
dc.identifier.isbn 978-81-908188-0-3
dc.identifier.uri http://hdl.handle.net/2248/4783
dc.description.abstract Quantum well photovoltaic cells (QWPVCs) arc heterostructure devices intended to achieve higher efficiencies than conventional cells. Generally this concept is used in well defined III-V material systems. This paper investigates effect on spectral absorption of amorphous silicon (a-Si) p-i-n photovoltaic cell because of inserting crystalline silicon (c-Si) quantum wells in the intrinsic layer. In this paper theoretical model is discussed and enhanced spectral absorption because of inserting quantum well structures inside the intrinsic layer of conventional amorphous silicon photovoltaic cell is reported. Control of the parameters is well within the thin film technological limits of present time. en
dc.language.iso en en
dc.publisher Department of Applied Optics and photonics, University of Calcutta en
dc.rights © Department of Applied Optics and photonics, University of Calcutta en
dc.subject Spectral Absorption en
dc.subject Silicon Photovoltaic Cell en
dc.subject Silicon Quantum Wells en
dc.title Enhanced spectral absorption in a-silicon photovoltaic cell by inserting c-silicon quantum wells en
dc.type Article en


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