Abstract:
Quantum well photovoltaic cells (QWPVCs) arc heterostructure devices intended to achieve higher efficiencies than conventional cells. Generally this concept is used in well defined III-V material systems. This paper investigates effect on spectral absorption of amorphous silicon (a-Si) p-i-n photovoltaic cell because of inserting crystalline silicon (c-Si) quantum wells in the intrinsic layer. In this paper theoretical model is discussed and enhanced spectral absorption because of inserting quantum well structures inside the intrinsic layer of conventional amorphous silicon photovoltaic cell is reported. Control of the parameters is well within the thin film technological limits of present time.
