Please use this identifier to cite or link to this item: http://hdl.handle.net/2248/6737
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dc.contributor.authorSuman, R-
dc.contributor.authorRevathy, M. S-
dc.contributor.authorPriyal, M-
dc.contributor.authorChitravel, T-
dc.contributor.authorKumar, T. P-
dc.date.accessioned2020-11-10T02:33:08Z-
dc.date.available2020-11-10T02:33:08Z-
dc.date.issued1905-07-
dc.identifier.citationJournal of Ovonic Research, Vol. 11, No. 5, pp. 243- 248en_US
dc.identifier.issn1584-9953-
dc.identifier.urihttp://prints.iiap.res.in/handle/2248/6737-
dc.descriptionRestricted Access © National Institute of Research and Development for Optoelectronicsen_US
dc.description.abstractA cost effective p-type Copper zinc tin selenide Cu2ZnSnSe4 (CZTSe) thin film was fabricated on molybdenum (Mo) coated soda lime glass substrate by sputtering method followed by rapid thermal processed (RTP) selenization. The n-type CdS layer with 50 nm were fabricated by chemical bath deposition, a resistive zinc oxide (i-ZnO) and a conducting transparent Al doped ZnO (Al:ZnO) were fabricated by sputtering consecutively. The structural, surface morphology and optical properties were investigated by X-ray diffraction, scanning electron microscopy (SEM),and Raman spectroscopy. The preliminary solar cell device of SLG/Mo/CZTS/CdS/i-ZnO/Al:ZnO/Al structure were precisely fabricated and the obtained results were presented.en_US
dc.language.isoenen_US
dc.publisherNational Institute of Research and Development for Optoelectronicsen_US
dc.subjectCZTSen_US
dc.subjectThin filmen_US
dc.subjectp-type Absorber layeren_US
dc.subjectSolar cellsen_US
dc.subjectCost effectiveen_US
dc.titleFabrication and characterization of SLG/Mo/CZTS/CdS/i-ZnO/Al:ZnO/Al thin film solar cell deviceen_US
dc.typeArticleen_US
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