Laser Damage Threshold studies on Ion Plated Perylene Thin Films

Abstract

Perylene thin films were deposited on cleaned glass substrates by ion plating technique in r.f.glow (10 MHz) sustained by argon gas of pressure 0.399 Pa. Laser-induced damage threshold of these thin films has been studied employing dye Q-switched Nd: glass laser emitting 25 ns pulses at 1062 nm. It is observed that the threshold increases with the decrease in thickness of the film. Typical damaged sites caused by the radiation of the laser pulses have been depicted. The threshold energy densities of the ion plated films for the thicknesses 150,201 and 295 nm have been found to be 25.420, 10.030 and 6.398 J/cm/sup2/ respectively. These results have been also compared with those of vacuum evaporated films. The possible damage mechanism followed in these films has been identified as impurity dominated one.