Please use this identifier to cite or link to this item: http://hdl.handle.net/2248/227
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dc.contributor.authorSubbarayan, A-
dc.contributor.authorBalasubramanian, C-
dc.contributor.authorNarayandass, Sa. K-
dc.date.accessioned2005-01-15T05:17:18Z-
dc.date.available2005-01-15T05:17:18Z-
dc.date.issued1991-
dc.identifier.citationKodaikanal Observatory Bulletins Series A, Vol. 11, pp. 119-123en
dc.identifier.issn0374-3632-
dc.identifier.urihttp://hdl.handle.net/2248/227-
dc.description.abstractPerylene thin films were deposited on cleaned glass substrates by ion plating technique in r.f.glow (10 MHz) sustained by argon gas of pressure 0.399 Pa. Laser-induced damage threshold of these thin films has been studied employing dye Q-switched Nd: glass laser emitting 25 ns pulses at 1062 nm. It is observed that the threshold increases with the decrease in thickness of the film. Typical damaged sites caused by the radiation of the laser pulses have been depicted. The threshold energy densities of the ion plated films for the thicknesses 150,201 and 295 nm have been found to be 25.420, 10.030 and 6.398 J/cm/sup2/ respectively. These results have been also compared with those of vacuum evaporated films. The possible damage mechanism followed in these films has been identified as impurity dominated one.en
dc.format.extent153672 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoen-
dc.publisherIndian Institute of Astrophysics, Bangaloreen
dc.subjectLasersen
dc.subjectThin filmsen
dc.titleLaser Damage Threshold studies on Ion Plated Perylene Thin Filmsen
dc.typeArticleen
Appears in Collections:IIAP Publications
Kodaikanal Observatory Bulletins (1905 - 1997 )

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