Transition properties of low-lying states in atomic indium

dc.contributor.author	Sahoo, B. K
dc.contributor.author	Das, B. P
dc.date.accessioned	2011-09-07T15:03:56Z
dc.date.available	2011-09-07T15:03:56Z
dc.date.issued	2011-07
dc.identifier.citation	Physical Review A, Vol. 84, No. 1, 012501	en
dc.identifier.uri	http://hdl.handle.net/2248/5562
dc.description	Open Access	en
dc.description.sponsorship	We present here the results of our relativistic many-body calculations of various properties of the first six low-lying excited states of indium. The calculations were performed using the relativistic coupled-cluster method in the framework of the singles, doubles, and partial triples approximation. The lifetime of the [4p6]5s25p3/2 state in this atom is determined. Our results could be used to shed light on the reliability of the lifetime measurements of the excited states of atomic indium that we have considered in the present work.	en
dc.language.iso	en	en
dc.publisher	American Physical Society	en
dc.relation.uri	http://link.aps.org/doi/10.1103/PhysRevA.84.012501	en
dc.rights	© American Physical Society	en
dc.title	Transition properties of low-lying states in atomic indium	en
dc.type	Article	en