| dc.contributor.author |
Raghu, M |
|
| dc.contributor.author |
Subramanyam, S. V |
|
| dc.contributor.author |
Chatterjee, S |
|
| dc.date.accessioned |
2008-09-16T16:13:12Z |
|
| dc.date.available |
2008-09-16T16:13:12Z |
|
| dc.date.issued |
1989-03 |
|
| dc.identifier.citation |
Solid State Communications, Vol. 69, No. 10, pp. 949 - 952 |
en |
| dc.identifier.uri |
http://hdl.handle.net/2248/3682 |
|
| dc.description.abstract |
To study the effect of hydrostatic pressure on the incommensurate lattice modulation at 153 K in K3Cu8S6, electrical resistivity measurements are done at 1.0 GPa, 1.5 GPa and 2.2 GPa. The sharp increase in resistance at 2.2 GPa is attributed to the incommensurate to commensurate transition. This is further confirmed by the non-linear I–V characteristics at 2.2 GPa showing the driven motion of the commensurate charge density wave in the presence of an external electric field. |
en |
| dc.language.iso |
en |
en |
| dc.publisher |
Springer |
en |
| dc.relation.uri |
http://dx.doi.org/10.1016/0038-1098(89)90002-1 |
en |
| dc.subject |
Pressure Induced Incommensurate |
en |
| dc.subject |
Commensurate Transition |
en |
| dc.title |
Pressure induced incommensurate to commensurate transition in K3Cu8S6 |
en |
| dc.type |
Article |
en |