Please use this identifier to cite or link to this item: http://hdl.handle.net/2248/4783
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dc.contributor.authorSircar, R-
dc.contributor.authorTripathi, B-
dc.contributor.authorSaxena, A. K-
dc.contributor.authorDibya, P-
dc.contributor.authorSrivastava, J. T-
dc.contributor.authorGupta, S-
dc.date.accessioned2009-08-31T10:25:27Z-
dc.date.available2009-08-31T10:25:27Z-
dc.date.issued2009-
dc.identifier.citationGhosh, Ajay and Choudhury, Debesh eds., Proceedings of International Conference on trends in optics and photonics., March 1 – 4, 2009, Kolkata, India., pp. 17 - 21en
dc.identifier.isbn978-81-908188-0-3-
dc.identifier.urihttp://hdl.handle.net/2248/4783-
dc.description.abstractQuantum well photovoltaic cells (QWPVCs) arc heterostructure devices intended to achieve higher efficiencies than conventional cells. Generally this concept is used in well defined III-V material systems. This paper investigates effect on spectral absorption of amorphous silicon (a-Si) p-i-n photovoltaic cell because of inserting crystalline silicon (c-Si) quantum wells in the intrinsic layer. In this paper theoretical model is discussed and enhanced spectral absorption because of inserting quantum well structures inside the intrinsic layer of conventional amorphous silicon photovoltaic cell is reported. Control of the parameters is well within the thin film technological limits of present time.en
dc.language.isoenen
dc.publisherDepartment of Applied Optics and photonics, University of Calcuttaen
dc.rights© Department of Applied Optics and photonics, University of Calcuttaen
dc.subjectSpectral Absorptionen
dc.subjectSilicon Photovoltaic Cellen
dc.subjectSilicon Quantum Wellsen
dc.titleEnhanced spectral absorption in a-silicon photovoltaic cell by inserting c-silicon quantum wellsen
dc.typeArticleen
Appears in Collections:IIAP Publications

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